BQ24314C Datasheet, PDF (5/26 Pages) Texas Instruments – Li+ Charger Front-End Protection IC

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bq24314C
SLUSAV3A – AUGUST 2012 – REVISED JULY 2015
6.5 Electrical Characteristics
over operating free-air temperature range –40°C to +125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IN
UVLO
Undervoltage lock-out, input power
detected threshold
CE = Low, V_IN increasing from 0 V to 3 V
2.6 2.7 2.8 V
V_hys(UVLO) Hysteresis on UVLO
T_DGL(PGOOD)
Deglitch time, input power detected
status
CE = Low, V_IN decreasing from 3 V to 0 V
CE = Low. Time measured from V_IN 0 V → 5 V 1
μs rise-time, to output turning ON
200 260 300 mV
8
ms
I_DD
Operating current
I_STDBY
Standby current
INPUT TO OUTPUT CHARACTERISTICS
CE = Low, No load on OUT pin,
V_IN = 5 V, R_ILIM = 24.9 kΩ
CE = High, V_IN = 5 V
400 600 μA
65
95 μA
VDO
Drop-out voltage IN to OUT
INPUT OVERVOLTAGE PROTECTION
CE = Low, V_IN = 5 V, I_OUT = 1 A
170 280 mV
V_OVP
t_PD(OVP)
V_hys(OVP)
t_ON(OVP)
Input overvoltage protection threshold
Input OV propagation delay⁽¹⁾
Hysteresis on OVP
Recovery time from input overvoltage
condition
INPUT OVERCURRENT PROTECTION
CE = Low, V_IN increasing from 5 V to 7.5 V
CE = Low
CE = Low, V_IN decreasing from 7.5 V to 5 V
CE = Low, Time measured from
V_IN 7.5 V → 5 V, 1 μs fall-time
5.71 5.85 6.00 V
200
ns
20
60 110 mV
8
ms
I_OCP
Input overcurrent protection threshold
range
300
1500 mA
I_OCP
K_ILIM
t_BLANK(OCP)
Input overcurrent protection threshold
Programmable current limit factor
Blanking time, input overcurrent
detected
CE = Low, R_ILIM = 24.9 kΩ,
3 V ≤ V_IN < V_OVP -V_hys(OVP)
900 1000 1100 mA
25
AkΩ
176
μs
t_REC(OCP)
Recovery time from input overcurrent
condition
64
ms
BATTERY OVERVOLTAGE PROTECTION
BV_OVP
Battery overvoltage protection
threshold
CE = Low, V_IN > 4.4 V
4.4 4.45 4.5 V
V_hys(Bovp)
I_VBAT
T_DGL(Bovp)
Hysteresis on BV_OVP
Input bias current on VBAT pin
Deglitch time, battery overvoltage
detected
CE = Low, V_IN > 4.4 V
V_BAT = 4.4 V, T_J = 25°C
CE = Low, V_IN > 4.4 V. Time measured from V_VBAT
rising from 4.1 V to 4.4 V to FAULT going low.
200 280 350 mV
10 nA
176
μs
THERMAL PROTECTION
T_J(OFF)
Thermal shutdown temperature
T_J(OFF-HYS) Thermal shutdown hysteresis
LOGIC LEVELS ON CE
140 150 °C
20
°C
V_IL
Low-level input voltage
V_IH
High-level input voltage
I_IL
Low-level input current
I_IH
High-level input current
LOGIC LEVELS ON FAULT
V_CE = 0 V
V_CE = 1.8 V
0
0.4 V
1.4
V
1 μA
15 μA
V_OL
Output low voltage
I_SINK = 5 mA
I_HI-Z
Leakage current, FAULT pin HI-Z
V_FAULT = 5 V
0.2 V
10 μA
(1) Not tested in production. Specified by design.
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