BQ2063_15 Datasheet, PDF (43/60 Pages) Texas Instruments – SBS v1.1-COMPLIANT Li-ION GAS-GAUGE IC

Not Recommended For New Designs
bq2063
SBS v1.1ĆCOMPLIANT LiĆION GASĆGAUGE IC
WITH PROTECTOR INTERFACE
SLUS468E− MAY 2001 − REVISED APRIL 2002
Table 10. EEPROM Memory Map (Continued)
EEPROM ADDRESS
NAME
Li-ION EXAMPLE
DATA
MSB LSB
0x42
Character 2
I
49
0x43
Character 3
O
4f
0x44
Character 4
N
4e
0x45
MaxT LowT
50°C, 4.8°C
c6
0x46
0x47 Overload Current
6000 mA
17
70
0x48
Overvoltage Margin
800 mV
32
0x49
Overcurrent Margin
512 mA
20
0x4a
Cell Under/Over Voltage
2496 mV/4384 mV
79
0x4b
Fast Charge Termination %
100%
ff
0x4c
Fully Charged Clear %
95%
a1
0x4d
Charge Efficiency
100%
ff
0x4e
Current Taper Threshold
200 mA
08
0x4f
Current Taper Qual Voltage
128 mV
40
0x50
Manufacturer Data Length
7
07
0x51
Control Mode
SC
04
0x52
Digital Filter
50 µV
2d
0x53
Self-Discharge Rate
0.21%
05
0x54
Battery Low %
7%
12
0x55
Near Full
200 mAh
64
0x56
0x57 Reserved
0
00
00
0x58
0x59 Reserved
0
00
00
0x5a
0x5b Reserved
0
00
00
0x5c
0x5d Reserved
0
00
00
0x5e
0x5f VFC Offset*
0
00
00
0x60
VFC Offset*
0
-
00
0x61
Temperature Offset*
0
-
00
0x62
ADC Offset*
0
-
00
0x63
Pack Programming
PDLY
-
01
0x64
Light Load Estimate
0
-
00
0x65
Reserved
0
-
00
0x66
0x67 ADC Voltage Gain*
5:1
30
d4
0x68
0x69 ADC Sense Resistor Gain*
0.05 Ω
30
d4
0x6a
0x6b VFC Sense Resistor Gain*
0.05 Ω
20
00
0x6c
0x6d VOC25
11170 mV
d4
5e
0x6e
0x6f VOC50
11370 mV
d3
96
0x70
0x71 VOC75
11730 mV
d2
2e
0x72
0x73 EDVF/EDV0
3000 mV
0b
b8
0x74
0x75 EMF/ EDV1
3433 mV
0d
69
0x76
0x77 EDV T0 Factor
0
00
00
0x78
0x79 EDV C0 Factor/EDV2
3567 mV
0d
ef
0x7a
0x7b EDV R0 Factor
0
00
e0
0x7c
0x7d EDV R1 Factor
0
00
00
0x7e
0x7f Check Byte 2
42330
a5
5a
NOTE: Reserved locations must be set as shown. Locations marked with an * are calibration values that can be
adjusted for maximum accuracy. For these locations the table shows the appropriate default or initial setting.
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