BQ4802LYPW Datasheet, PDF (3/26 Pages) Texas Instruments – PARALLEL REAL-TIME CLOCK WITH CPU SUPERVISOR AND EXTERNAL SRAM NONVOLATILE MEMORY BACKUP

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bq4802Y
bq4802LY
SLUS464C – AUGUST 2000 – REVISED JUNE 2002
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC(min) ≤ VCC ≤ VCC(max) unless otherwise noted)
INPUT SUPPLY
PARAMETER
ICC
Supply current
ISB1
Standby supply current
ICCB
Battery operation supply current
ILI
ILO
VOUT(1)
VOUT(2)
Input leakage current
Output leakage current
Output voltage
VPFD
Power fail detect voltage
bq4802Y
bq4802LY
VSO
VRST
VINT
Supply switch over voltage
RST output voltage(1)
INT output voltage(1)
TEST CONDITIONS
100% Minimum duty cycle,
CS = VIL, II/O = 0 mA
CS = VIH
CS = VCC – 0.2 V,
0 V ≤ VIN ≤ 0.2 V or VIN = VCC – 0.2 V
VBC = 3 V, TA = 25°C,
No load at VOUT or CEOUT, II/O = 0 mA
VIN = VSS to VCC
CS = VIH or OE = VIH or WE = VIL
IOUT = 80 mA,VCC > VBC
IOUT = 100 µA, VCC < VBC
VBC > V(PFD)
VBC < V(PFD)
I(RST) = 4 mA
I(INT) = 4 mA
(1) _{RST and INT are open drain outputs.}
MIN TYP MAX UNIT
5
9 mA
3
1.5
mA
0.3 0.5 µA
–1
1 µA
–1
1 µA
VCC-0.3
V
VBC-0.3
4.30 4.37 4.5
V
2.4 2.53 2.65
VPFD
V
VBC
0.4 V
0.4 V
WATCHDOG
PARAMETER
I(WDIL)
I(WDIH)
Low-level watchdog input current
High-level watchdog input current
V(WDO) WDO output voltage
TEST CONDITIONS
ISINK = 4 mA
ISOURCE = 2 mA
CRYSTAL SPECIFICATIONS (DT-26) OR EQUIVALENT)
PARAMETER
fO
Oscillation frequency
CL
Load capacitance
TP
Temperature turnover point
k
Parabolic curvature constant
Q
Quality factor
R1
C0
C0/C1
DL
∆f/f0
Series resistance
Shunt capacitance
Capacitance ratio
Drive level
Aging (first year at 25°C)
TEST CONDITIONS
CAPACITANCE
PARAMETER
II/O
Input/output capacitance
CI
Input capacitance
TEST CONDITIONS
VOut = 0 V
V=0V
MIN TYP MAX UNIT
–50 –10
20
µA
50
0.4
V
2.4
MIN
20
40,000
TYP
32.768
6
25
70,000
1.1
430
1
MAX
30
–0.042
45
1.8
600
1
–
UNIT
kHz
pF
°C
ppm/°C
kΩ
pF
µW
ppm
MIN TYP MAX UNIT
7
pF
5
3