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BQ24707 Datasheet, PDF (27/36 Pages) Texas Instruments – 1-4 Cell Li+ Battery SMBus Charge Controller With Independent Comparator and Advanced Circuit Protection
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bq24707
bq24707A
SLUSA78B – JULY 2010 – REVISED MARCH 2011
To prevent unintentional charger shut down in normal operation, MOSFET RDS(on) selection and PCB layout is
very important. Figure 22 shows a need improve PCB layout example and its equivalent circuit. In this layout,
system current path and charger input current path is not separated, as a result, the system current causes
voltage drop in the PCB copper and is sensed by IC. The worst layout is when a system current pull point is after
charger input; as a result all system current voltage drops are counted into over current protection comparator.
The worst case for IC is the total system current and charger input current sum equals DPM current. When
system pull more current, the charger IC try to regulate RAC current as a constant current by reducing charging
current.
R AC
System Path PCB Trace
System current
I DPM
R AC
R PCB
I SYS
I CHRGIN
Charger input current
Charger Input PCB Trace
ACP
ACN
Charger
I BAT
To ACP
To ACN
(a) PCB Layout
(b) Equivalent Circuit
Figure 22. Need Improve PCB Layout Example
Figure 23 shows the optimized PCB layout example. The system current path and charge input current path is
separated, as a result the IC only senses charger input current caused PCB voltage drop and minimized the
possibility of unintentional charger shut down in normal operation. This also makes PCB layout easier for high
system current application.
R AC
System Path PCB Trace
System current
I DPM
I SYS
To ACP
To ACN
Single point connection at RAC
Charger input current
Charger Input PCB Trace
(a) PCB Layout
R AC
R PCB
I CHRGIN
ACP
ACN
Charger
I BAT
(b) Equivalent Circuit
Figure 23. Optimized PCB Layout Example
The total voltage drop sensed by IC can be express as the following equation.
Vtop = RAC x IDPM + RPCB x (ICHRGIN + (IDPM - ICHRGIN) x k) + RDS(on) x IPEAK
(15)
where the RAC is the AC adapter current sensing resistance, IDPM is the DPM current set point, RPCB is the PCB
trace equivalent resistance, ICHRGIN is the charger input current, k is the PCB factor, RDS(on) is the high side
MOSFET turn on resistance and IPEAK is the peak current of inductor. Here the PCB factor k equals 0 means the
best layout shown in Figure 23 where the PCB trace only goes through charger input current while k equals 1
means the worst layout shown in Figure 22 where the PCB trace goes through all the DPM current. The total
voltage drop must below the high side short circuit protection threshold to prevent unintentional charger shut
down in normal operation.
The low side MOSFET short circuit voltage drop threshold is fixed to typical 110mV. The high side MOSFET
short circuit voltage drop threshold can be adjusted via SMBus command. ChargeOption() bit[8:7] = 00, 01, 10,
11 set the threshold 300mV, 500mV, 700mV and 900mV respectively. For a fixed PCB layout, host should set
proper short circuit protection threshold level to prevent unintentional charger shut down in normal operation.
© 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): bq24707 bq24707A
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