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THS3201-EP_14 Datasheet, PDF (2/34 Pages) Texas Instruments – 1.8-GHz LOW-DISTORTION CURRENT-FEEDBACK AMPLIFIER
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THS3201-EP
SGLS283B – APRIL 2005 – REVISED JANUARY 2009 ..................................................................................................................................................... www.ti.com
Low-Noise, Low-Distortion, Wideband Application Circuit
50 Ω Source
50 Ω
VI
+7.5 V
49.9 Ω
+
THS3201
_
49.9 Ω
50 Ω
-7.5 V
768 Ω
768 Ω
NOTE: Power supply decoupling capacitors not shown
NONINVERTING SMALL SIGNAL
FREQUENCY RESPONSE
8
7
RF = 768 Ω
6
5
4
3
Gain = 2.
2
RL = 100 Ω,
1
VO = 0.2 VPP.
VS = ±7.5 V
0
100 k 1 M 10 M
100 M
f - Frequency - Hz
1 G 10 G
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VS
VI
IO
VID
TJ
TJ
Tstg
ESD ratings
Supply voltage
Input voltage
Output current
Differential input voltage
Continuous power dissipation
Maximum junction temperature(2)
Maximum junction temperature, continuous operation, long-term reliability(3)
Storage temperature range
Lead temperature 1,6 mm (1/16 in) from case for 10 s
Human body model
Charged device model
Machines model
16.5 V
±VS
175 mA
±3 V
See Dissipation Ratings Table
150°C
125°C
–65°C to 150°C
300°C
3000 V
1500 V
100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum ratings under any condition are limited by the constraints of the silicon process. Stresses above these ratings
may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(3) Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of
overall device life. See Figure 1 for additional information on thermal derating.
2
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