MUX508 Datasheet, PDF (19/37 Pages) Texas Instruments – Low-Capacitance, Low-Charge-Injection, Precision, Analog Multiplexers

www.ti.com
MUX508, MUX509
SBAS758A – JANUARY 2016 – REVISED MARCH 2016
8.8 Charge Injection
The MUX50x have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and
PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate
signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is
denoted by the symbol Q_INJ. Figure 32 shows the setup used to measure charge injection.
VDD
VSS
3V
VEN
VOUT
QINJ = CL × V_OUT
VOUT
RS
VS
VDD
VSS
A0
A1
A2
MUX508
S
D
EN
GND
VEN
VOUT
CL
1 nF
Figure 32. Charge-Injection Measurement Setup
Copyright © 2016, Texas Instruments Incorporated
Product Folder Links: MUX508 MUX509
Submit Documentation Feedback
19