BQ4285E_14 Datasheet, PDF (15/31 Pages) Texas Instruments – Enhanced RTC With NVRAM Control

bq4285E/L
DC Electrical Characteristics—bq4285L (TA = TOPR, VCC = 3.13V ± 0.45%)
Symbol
Parameter
ILI
Input leakage current
ILO
Output leakage current
VOH
VOL
ICC
Output high voltage
Output low voltage
Operating supply current
VSO
Supply switch-over voltage
ICCB
Battery operation current
ICCSB
VPFD
VOUT1
VOUT2
Standby supply current
Power-fail-detect voltage
VOUT voltage
V_OUT voltage
Minimum Typical Maximum Unit
Conditions/Notes
-
-
±1
µA VIN = VSS to VCC
AD0–AD7, INT, and SQW
-
-
±1
µA in high impedance,
VOUT = VSS to VCC
2.2
-
-
V IOH = -2.0 mA
-
-
0.4
V IOL = 4.0 mA
-
5
9
mA
Min. cycle, duty = 100%,
IOH = 0mA, IOL = 0mA
-
V_PFD
-
V VBC > VPFD
-
V_BC
-
V VBC < VPFD
-
0.3
0.5
µA
V_BC = 3V, TA = 25°C, no
load on VOUT or CEOUT
VIN = VCC or VSS,
-
100
-
µA CS ≥ V_CC - 0.2,
no load on VOUT
2.4
2.53
2.65
V
VCC - 0.3V
-
-
V IOUT = 80mA, VCC >VBC
VBC - 0.3V
IOUT = 100µA, VCC < VBC
ICE
Chip enable input current
-
-
120
Note:
Typical values indicate operation at TA = 25°C, VCC = 3V.
µA Internal 30K pull-up
15