DRV8850 Datasheet, PDF (14/22 Pages) Texas Instruments – Low-Voltage H-Bridge IC With LDO Voltage Regulator

DRV8850
SLVSCC0A – NOVEMBER 2013 – REVISED JANUARY 2014
INxH
INxL
High-side
Gate
Low-side
Gate
HS Slew Rate
LS Slew Rate
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HS Slew Rate
LS Slew Rate
OUTx
t_DELAY
t_DEAD
t_F
t_DELAY
t_R
t_DEAD
Figure 17. High-Side Slow Decay or Fast Decay Operation – Current Sunk into OUTx
Power Supplies and Input Pins
An internal charge pump generates a voltage greater than VCC that is used to drive the internal N-channel
power MOSFETs. The charge pump requires a capacitor between the VCP and VCC pins. TI recommends to
bypass VCC to ground with 0.1 and 10-μF ceramic capacitors, placed as close as possible to the IC. Each input
pin has a weak pulldown resistor to ground (see Electrical Characteristics for more details).
The input pins should not be driven to more than 0.6 V without the VCC power supply removed.
LDO Voltage Regulator
An LDO regulator is integrated into the DRV8850 device. The LDO regulator is typically used to provide the
supply voltage for a low-power microcontroller. For proper operation, bypass the LDOOUT pin to GND using a
ceramic capacitor. The recommended value for this component is 2.2 μF.
Two external resistors are used to set the LDO voltage (V_LDO) by creating a voltage divider between LDOOUT
and LDOFB. The LDO output voltage can be given by:
  VLDO VFB x 1  R1 / R2 V
where
• R1 is located between LDOOUT and LDOFB
• R2 is between LDOFB and GND
(2)
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