MSP430G2230-EP Datasheet, PDF (13/40 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

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MSP430G2230-EP
SLAS863 – AUGUST 2012
A. See data sheet for absolute maximum and minimum recommended operating conditions.
B. Silicon operating life design goal is 10 years at 110°C junction temperature (does not include package interconnect
life).
C. The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the
dominant failure mechanism affecting device wearout for the specific device process and design characteristics.
Figure 4. Operating Life Derating Chart
THERMAL INFORMATION
THERMAL METRIC⁽¹⁾
θ_JA
θ_JCtop
θ_JB
ψ_JT
ψ_JB
θ_JCbot
Junction-to-ambient thermal resistance⁽²⁾
Junction-to-case (top) thermal resistance⁽³⁾
Junction-to-board thermal resistance⁽⁴⁾
Junction-to-top characterization parameter⁽⁵⁾
Junction-to-board characterization parameter⁽⁶⁾
Junction-to-case (bottom) thermal resistance⁽⁷⁾
MSP430G2230
D
8 PINS
101.2
42.3
42.9
4.0
42.2
N/A
UNITS
°C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψ_JT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ_JA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψ_JB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θ_JA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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