BQ4285_14 Datasheet, PDF (13/29 Pages) Texas Instruments – Real-Time Clock (RTC) With NVRAM Control

bq4285
DC Electrical Characteristics (TA = TOPR, VCC = 5V ± 10%)
Symbol
Parameter
ILI
Input leakage current
ILO
Output leakage current
Minimum
-
-
Typical Maximum
-
±1
-
±1
VOH
VOL
I_CC
VSO
I_CCB
VPFD
VOUT1
VOUT2
Output high voltage
Output low voltage
Operating supply current
Supply switch-over voltage
Battery operation current
Power-fail-detect voltage
VOUT voltage
V_OUT voltage
2.4
-
-
-
-
7
-
V_BC
-
0.3
4.0
VCC - 0.3V
VBC - 0.3V
4.17
-
-
0.4
15
-
0.5
4.35
-
Unit
µA
µA
V
V
mA
V
µA
V
V
Conditions/Notes
VIN = VSS to VCC
AD0–AD7, INT, and
SQW in high impedance,
VOUT = VSS to VCC
IOH = -2.0 mA
IOL = 4.0 mA
Min. cycle, duty = 100%,
IOH = 0mA, IOL = 0mA
V_BC = 3V, TA = 25°C, no
load on VOUT or CEOUT
IOUT = 100mA, VCC >VBC
IOUT = 100µA, VCC < VBC
ICE
Note:
Chip enable input current
-
-
100
µA
Typical values indicate operation at TA = 25°C, VCC = 5V or VBC = 3V.
Internal 50K pull-up
Crystal Specifications (DT-26 or Equivalent)
Symbol
fO
CL
TP
k
Q
R1
C0
C0/C1
DL
∆f/fO
Parameter
Oscillation frequency
Load capacitance
Temperature turnover point
Parabolic curvature constant
Quality factor
Series resistance
Shunt capacitance
Capacitance ratio
Drive level
Aging (first year at 25°C)
Minimum
-
-
20
-
40,000
-
-
-
-
-
Typical
32.768
6
25
-
70,000
-
1.1
430
-
1
Maximum
-
-
30
-0.042
-
45
1.8
600
1
-
Unit
kHz
pF
°C
ppm/°C
KΩ
pF
µW
ppm
13