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THS4021_16 Datasheet, PDF (10/29 Pages) Texas Instruments – 350-MHz LOW-NOISE HIGH-SPEED AMPLIFIERS
THS4021
THS4022
SLOS265C – SEPTEMBER 1999 – REVISED JULY 2007
RS
eRs
en
Noiseless
eni
+
_
eno
IN+
eRf
RF
www.ti.com
IN–
eRg
RG
Figure 31. Noise Model
S0277-01
The total equivalent input noise density (eni) is calculated by using the following equation:
Ǹ ǒ Ǔ ǒ ǒ ǓǓ ǒ Ǔ eni +
ǒenǓ2 ) IN+
2
RS ) IN−
2
RF ø RG ) 4 kTRs ) 4 kT RF ø RG
where:
k = Boltzmann’s constant = 1.380658 × 10–23
T = Temperature in degrees Kelvin (273 + °C)
RF || RG = Parallel resistance of RF and RG
To get the equivalent output noise of the amplifier, just multiply the equivalent input noise density (eni) by the
overall amplifier gain (AV).
ǒ Ǔ eno + eni AV
+
eni
1
)
RF
RG
(noninverting case)
As the previous equations show, to keep noise at a minimum, small value resistors should be used. As the
closed-loop gain is increased (by reducing RG), the input noise is reduced considerably because of the parallel
resistance term. This leads to the general conclusion that the most dominant noise sources are the source
resistor (RS) and the internal amplifier noise voltage (en). Because noise is summed in a root-mean-squares
method, noise sources smaller than 25% of the largest noise source can be effectively ignored. This can greatly
simplify the formula and make noise calculations much easier to calculate.
For more information on noise analysis, see the Noise Analysis in Operational Amplifier Circuits application
report (SLVA043).
This brings up another noise measurement usually preferred in RF applications, the noise figure (NF). Noise
figure is a measure of noise degradation caused by the amplifier. The value of the source resistance must be
defined and is typically 50 Ω in RF applications.
NF
+
10logȧȧȱȲǒeeRnsi Ǔ22
ȳ
ȧȧ
È´
10
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