TMS320C6711B Datasheet, PDF (83/132 Pages) Texas Instruments – FLOATING-POINT DIGITAL SIGNAL PROCESSORS

TMS320C6711, TMS320C6711B, TMS320C6711C
FLOATINGĆPOINT DIGITAL SIGNAL PROCESSORS
SPRS088O − FEBRUARY 1999 − REVISED NOVEMBER 2005
SYNCHRONOUS-BURST MEMORY TIMING (CONTINUED)
switching characteristics over recommended operating conditions for synchronous-burst SRAM
cycles^†‡ (see Figure 31 and Figure 32) [C6711]
NO.
PARAMETER
1 td(EKOH-CEV) Delay time, ECLKOUT high to CEx valid
2 td(EKOH-BEV) Delay time, ECLKOUT high to BEx valid
3 td(EKOH-BEIV) Delay time, ECLKOUT high to BEx invalid
4 td(EKOH-EAV) Delay time, ECLKOUT high to EAx valid
5 td(EKOH-EAIV) Delay time, ECLKOUT high to EAx invalid
8 td(EKOH-ADSV) Delay time, ECLKOUT high to ARE/SDCAS/SSADS valid
9 td(EKOH-OEV) Delay time, ECLKOUT high to, AOE/SDRAS/SSOE valid
10 td(EKOH-EDV) Delay time, ECLKOUT high to EDx valid
11 td(EKOH-EDIV) Delay time, ECLKOUT high to EDx invalid
12 td(EKOH-WEV) Delay time, ECLKOUT high to AWE/SDWE/SSWE valid
C6711-100
MIN MAX
1.5
11
11
1.5
11
1.5
1.5
11
1.5
11
11
1.5
1.5
11
C6711-150
MIN MAX
1.5 6.9§
6.9§
1.5
6.9§
1.5
1.5 6.9§
1.5 6.9§
7.1§
1.5
1.5 6.9§
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
switching characteristics over recommended operating conditions for synchronous-burst SRAM
cycles^†‡ (see Figure 31 and Figure 32) [C6711B]
NO.
PARAMETER
1 td(EKOH-CEV) Delay time, ECLKOUT high to CEx valid
2 td(EKOH-BEV) Delay time, ECLKOUT high to BEx valid
3 td(EKOH-BEIV) Delay time, ECLKOUT high to BEx invalid
4 td(EKOH-EAV) Delay time, ECLKOUT high to EAx valid
5 td(EKOH-EAIV) Delay time, ECLKOUT high to EAx invalid
8
td(EKOH-ADSV)
Delay time, ECLKOUT high to
ARE/SDCAS/SSADS valid
Delay time, ECLKOUT high to,
9 td(EKOH-OEV) _{AOE/SDRAS/SSOE valid}
C6711B-100 C6711BGFNA-100
MIN MAX
MIN
MAX
1
11
1
8.5
11
8.5
1
1
11
8.5
1
1
C6711B-150
MIN MAX
1 7.5
7.5
1
7.5
1
UNIT
ns
ns
ns
ns
ns
1
11
1
8.5
1 7.5 ns
1
11
1
8.5
1 7.5 ns
10 td(EKOH-EDV) Delay time, ECLKOUT high to EDx valid
11 td(EKOH-EDIV) Delay time, ECLKOUT high to EDx invalid
Delay time, ECLKOUT high to
12 td(EKOH-WEV) _{AWE/SDWE/SSWE valid}
11
1
1
11
8.5
7.5 ns
1
1
ns
1
8.5
1 7.5 ns
† _{The C6711/11B/11C SBSRAM interface takes advantage of the internal burst counter in the SBSRAM. Accesses default to incrementing 4-word}
bursts, but random bursts and decrementing bursts are done by interrupting bursts in progress. All burst types can sustain continuous data flow.
‡ _{ARE/SDCAS/SSADS, AOE/SDRAS/SSOE, and AWE/SDWE/SSWE operate as SSADS, SSOE, and SSWE, respectively, during SBSRAM}
accesses.
§ _{Make sure the external SBSRAM meets the timing specifications of the C6711 device. Delays or buffers may be needed to compensate for any}
timing differences. IBIS analysis should be used to correctly model the system interface.
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