BQ3060 Datasheet, PDF (8/17 Pages) Texas Instruments – SBS 1.1-COMPLIANT GAS GAUGE and PROTECTION with CEDV

bq3060
SLUS928A – MARCH 2009 – REVISED NOVEMBER 2009
FLASH
t_(ROWPROG)
t_(MASSERASE)
t_(PAGEERASE)
I_CC(PROG)
I_CC(ERASE)
PARAMETER ⁽¹⁾
Data retention
Flash programming write-cycles
Row programming time
Mass-erase time
Page-erase time
Flash-write supply current
Flash-erase supply current
(1) Specified by design. Not production tested
TEST CONDITIONS
TA = –40°C to 0°C
T_A = 0°C to 85°C
RAM BACKUP
PARAMETER
I_(RBI)
RBI data-retention input current
V_(RBI)
RBI data-retention voltage⁽¹⁾
(1) Specified by design. Not production tested.
TEST CONDITIONS
V_RBI > V_(RBI)MIN, V_REG27 < V_REG27IT-, T_A =
70°C to 110°C
V_RBI > V_(RBI)MIN, V_REG27 < V_REG27IT-, T_A =
–40°C to 70°C
CURRENT PROTECTION THRESHOLDS
PARAMETER
V_(OCD)
OCD detection threshold voltage range, typical
ΔV_(OCDT)
OCD detection threshold voltage program step
V_(SCCT)
SCC detection threshold voltage range, typical
ΔV_(SCCT)
SCC detection threshold voltage program step
V_(SCDT)
SCD detection threshold voltage range, typical
ΔV_(SCDT)
V_(OFFSET)
V_{(Scale_Err)}
SCD detection threshold voltage program step
SCD, SCC and OCD offset
SCD, SCC and OCD scale error
TEST CONDITIONS
RSNS = 0
RSNS = 1
RSNS = 0
RSNS = 1
RSNS = 0
RSNS = 1
RSNS = 0
RSNS = 1
RSNS is set in
STATE_CTL
register
RSNS = 0
RSNS = 1
RSNS = 0
RSNS = 1
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MIN TYP MAX UNIT
10
Years
20k
Cycles
2 ms
250 ms
25 ms
4
6 mA
8
22
mA
3
15
MIN TYP MAX UNIT
20 1500
nA
500
1
V
MIN
50
25
–100
–50
100
50
–10
–10%
TYP MAX UNIT
200
mV
100
10
mV
5
–300
mV
–225
-50
mV
-25
450
mV
225
50
mV
25
10
mV
10%
8
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