BQ3060 Datasheet, PDF (2/17 Pages) Texas Instruments – SBS 1.1-COMPLIANT GAS GAUGE and PROTECTION with CEDV

bq3060
SLUS928A – MARCH 2009 – REVISED NOVEMBER 2009
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
SYSTEM PARTITIONING DIAGRAM
Pack +
FUSE
SMBD ^SMBD
SMBC SMBC
SMB 1.1
PRES ^PRES
Data Flash
Memory
Charging
Algorithm
SHA-1
Authentication
Fuse Blow &
Detection
Logic
Oscillator
System
Control
Over
Temperature
Protection
Temperature
Measurement
Over- &
Under-
Voltage
Protection
Over
Current
Protection
ZVCHG
CHG DSG
PACK BAT
Pre Charge
FET Drive
P-Channel
FET Drive
Power Mode
Control
AFE HW
Control
Watchdog
Voltage
Measurement
Cell Voltage Mux
& Translation
CEDV
Gas Gauging
Coloumb
Counter
External Cell
Balancing Driver
HW Over
Current &
Short Circuit
Protection
Regulator
RBI
VSS
VC1
VC2
VC3
VC4
REG27
Pack -
TS1 TS2
SRN SRP
RSNS
5mW –20mW typ.
bq3060
VC1
VDD
VC2
OUT
VC3
CD
VC4
GND
bq 294xz
ABSOLUTE MAXIMUM RATINGS
Over operating free-air temperature range (unless otherwise noted)⁽¹⁾
V_MAX
V_IN
V_O
I_SS
T_FUNC
T_STG
Supply voltage range PACK w.r.t. Vss
VC1, BAT
VC2
VC3
Input voltage range _VC4
SRP, SRN
SMBD, SMBC
TS1, TS2, /PRES
CHG, DSG, ZVCHG, FUSE
Output voltage range
RBI, REG27
Maximum combined sink current for input pins
Functional temperature
Storage temperature range
VALUE
–0.3 to 34
V_VC2–0.3 to V_VC2+8.5 or 34,
whichever is lower
V_VC3–0.3 to V_VC3+8.5
V_VC4–0.3 to V_VC4+8.5
V_SRP–0.3 to V_SRP+8.5
–0.3 to V_REG27
–0.3 to 6.0
–0.3 to V_REG27 + 0.3
–0.3 to BAT
–0.3 to 2.75
50
–40 to 110
–65 to 150
UNIT
V
V
V
V
V
V
V
V
V
V
mA
°C
°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
2
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