BQ24765_15 Datasheet, PDF (7/37 Pages) Texas Instruments – SMBus-Controlled Multi-Chemistry Battery Charger With Integrated Power MOSFETs

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bq24765
SLUS999 – NOVEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
7.0 V ≤ V(DCINA) ≤ 24 V, 0°C < T_J < +125°C, typical values are at T_A = 25°C, with respect to AGND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
ADAPTER CURRENT SENSE AMPLIFIER
V_{CSSP/N_OP}
V_VICM
I_VICM
A_VICM
Input common mode range
VICM output voltage range
VICM Output Current
Current sense amplifier voltage
gain
Voltage on CSSP/CSSN
A_VICM = V_VICM/ V_{IREG_DPM}
0
24
V
0
2
V
0
1
mA
20
V/V
Adapter current sense accuracy
I_{VICM_LIM}
Output current limit
C_{VICM_MAX}
Maximum output load capacitance
ACIN COMPARATOR (Adapter Detect)
V_{IREG_DPM} = V(CSSP–CSSN) ≥ 40 mV
V_{IREG_DPM} = V(CSSP–CSSN) = 20 mV
V_{IREG_DPM} = V(CSSP–CSSN) = 5 mV
V_{IREG_DPM} = V(CSSP–CSSN) = 1.5 mV
V_VICM = 0 V
For stability with 0 mA to 1 mA load
–2%
–3%
–25%
–33%
1
2%
3%
25%
33%
mA
100
pF
V_{DCIN_VFB_OP}
Differential voltage from DCINA to
VFB
–20
24
V
V_{ACIN_CHG}
ACIN rising threshold
Min voltage to enable charging, V_ACIN rising
V_{ACIN_CHG_HYS}
ACIN falling hysteresis
ACIN rising deglitch ⁽¹⁾
V_ACIN falling
V_ACIN rising
V_{ACIN_BIAS}
Adapter present rising threshold
Min voltage to enable all bias, V_ACIN rising
V_{ACIN_BIAS_HYS}
Adapter present falling hysteresis V_ACIN falling
V(DCIN–VFB) COMPARATOR (Reverse Discharging Protection)
2.376 2.40 2.424
V
40
mV
100
μs
0.56 0.62 0.68
V
20
mV
V_{DCIN-VFB_FALL}
V_{DCIN-VFB__HYS}
DCIN to VFB falling threshold
DCIN to VFB hysteresis
DCIN to VFB rising deglitch
VFB OVERVOLTAGE COMPARATOR
V_DCIN – V_VFB falling
V_DCIN – V_VFB > V_{DCIN-VFB_RISE}
140
185
240
mV
50
mV
1
ms
V_{OV_RISE}
Over-voltage rising threshold
V_{OV_FALL}
Over-voltage falling threshold
VFB BATSHORT COMPARATOR (Undervoltage)
As percentage of V_{VFB_REG}
As percentage of V_{VFB_REG}
104%
102%
V_{VFB_SHORT_RISE}
VFB short rising threshold
V_{VFB_SHORT_HYS}
VFB short falling hysteresis
V_{VFB_SHORT_ICHG}
VFB short precharge current
VFB BATLOWV COMPARATOR
2.6
2.7 2.85
V
250
mV
60
220
mA
V_{VFB_LOWV_RISE}
V_{VFB_LOWV_HYS}
VFB LOWV rising threshold
VFB LOWV falling hysteresis
VFB LOWV one-shot reset time
Time to time charger
3.9
4
4.1
V
400
mV
2
ms
V_{VFB_LOWV_ICHG}
VFB LOWV max DAC output
VFB falling, on 10mΩ resistor
CHARGE OVER-CURRENT COMPARATOR – Average current using sense resistor
3
A
Charge overcurrent falling
threshold
V(CSOP-CSON) > 33mV, as percentage of I_{REG_CHG}
145%
Minimum current limit
V(CSOP-CSON) < 33mV
50
mV
Internal filter pole frequency
160
kHz
CHARGE OVER-CURRENT COMPARATOR – Cycle-by-Cycle Maximum current using High-Side SenseFet
V_{OCP_CycleByCycle}
Charge over-current rising
threshold, latches off high-side
MOSFET until next cycle.
High-side drain current rising-edge.
8
10
12
A
(1) Verified by design.
Copyright © 2009, Texas Instruments Incorporated
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