BQ4014_08 Datasheet, PDF (5/13 Pages) Texas Instruments – 256Kx8 Nonvolatile SRAM

Read Cycle No. 1 (Address Access) ^1,2
bq4014/bq4014Y
Read Cycle No. 2 (CE Access) ^1,3,4
Read Cycle No. 3 (OE Access) ^1,5
Notes:
Sept. 1992
1. WE is held high for a read cycle.
2. Device is continuously selected: CE = OE = VIL.
3. Address is valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Device is continuously selected: CE = VIL.
5