BQ4010_07 Datasheet, PDF (5/18 Pages) Texas Instruments – 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)

bq4010/Y/LY
www.ti.com
SLUS116A – MAY 1999 – REVISED APRIL 2007
ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum at the end of the datasheet, or see
the TI website at www.ti.com.
DEVICE NUMBER
bq4010MA-70
bq4010MA-85
bq4010MA-150
bq4010MA-200
bq4010YMA-70
bq4010YMA-85
bq4010YMA-150
bq4010YMA-200
bq4010YMA-70N
bq4010YMA-85N
bq4010YMA-150N
bq4010YEBZ-70N
bq4010LYMA-70N
bq4010LYEBZ-70N
MAXIMUM
ACCESS
TIME (ns)
70
85
150
200
70
85
150
200
70
85
150
70
SELECTION GUIDE
NEGATIVE SUPPLY
TOLERANCE
(%)
NOMINAL INPUT
VOLTAGE
V_CC (V)
TEMPERATURE
(°C)
-5
0 to 70
5
-10
-40 to 85
3.3
MODULE
DIP
Lifetime Lithium
DIP
Lifetime Lithium
PRODUCT
LINE
bq40
MEMORY
DENSITY
10
10 = 8 k × 8
11 = 32 k × 8
13 = 128 k × 8
14 = 256 k × 8
15 = 512 k × 8
16 = 1024 k × 8
17 = 2048 k × 8
INPUT
VOLTAGE
(V)
L
Blank = 5
L= 3.3
PART NUMBERING
NEGATIVE
SUPPLY
TOLERANCE
Y
Blank = 5%
Y = 10%
PACKAGE
MA
MA = DIP
EBZ = SMD
SPEED
(ns)
70
70
85
100
120
150
200
TEMPERATURE
(°C)
N
Blank = Commercial
( 0 to 70)
N = Industrial
(-40 to 85)
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