BQ4010_07 Datasheet, PDF (10/18 Pages) Texas Instruments – 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V)

bq4010/Y/LY
SLUS116A – MAY 1999 – REVISED APRIL 2007
Address
t_RC
t_AA
OE
t_OE
t_OHZ
D_OUT
High−Z
t_OLZ
Data Valid
(1) WE is held high for a read cycle.
(2) Device is continuously selected: CE = V_IL.
Figure 7. Read Cycle No. 3 (OE Access) ⁽¹⁾⁽²⁾
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High−Z
10
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