BQ24257 Datasheet, PDF (5/45 Pages) Texas Instruments – 2A Single Input I2C, Standalone Switch-Mode Li-Ion Battery Charger with Integrated Current Sense Resistor

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bq24257
bq24258
SLUSBG0B – FEBRUARY 2013 – REVISED JULY 2013
ELECTRICAL CHARACTERISTICS
bq24257 App Circuit, V_UVLO < V_IN < V_OVP AND V_IN > V_BAT+V_SLP, T_J = 0°C – 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
INPUT CURRENTS
V_UVLO < V_IN < V_OVP and V_IN > V_BAT + V_SLP,
PWM switching, CE enable
I_IN
Supply current from IN
V_UVLO < V_IN < V_OVP and V_IN > V_BAT + V_SLP,
PWM switching, CE disable
0°C< T_J < 85°C, High-Z Mode
0°C< T_J < 85°C, V_BAT = 4.2 V,
Battery discharge current in high
VIN = 0 V or 5V, High-Z Mode
I_BAT
impedance SYSOFF mode , (BAT,
SW,SYS)
0°C< T_J < 85°C, V_BAT = 4.2 V,
VIN = 0V, SYSOFF Mode
BATTERY CHARGER
R_SNS
Internal battery charger MOSFET on-
resistance
Measured from BAT to SYS, V_BAT = 4.2V
(WCSP)
Measured from BAT to SYS, V_BAT = 4.2V
(QFN)
V_BATREG
I_CHG
I²C mode
SA mode
Voltage regulation accuracy
Fast charge current range
Fast charge current accuracy
Operating in voltage regulation,
Programmable range
T_J = 25°C
T_J = 0°C to 125°C
V_LOWV ≤ V_BAT < V_BATREG
I²C mode
I_{CHG_LOW}
K_ISET
V_ISET
Low Charge Current Setting
Programmable fast charge current
factor
Maximum ISET pin voltage (in
regulation)
Set via I²C
I_CHG
=
K_ISET
R_ISET
(0.5 A ≤ I_CHG < 2 A)
R_ISET-SHORT
V_LOWV
Short circuit resistance threshold
Hysteresis for V_LOWV
Battery voltage rising bq24257
Battery voltage falling
I_PRECHG
V_{BAT_UVLO}
Pr-charge current
(V_BATUVLO < V_BAT < V_LOWV)
Battery under voltage lockout
threshold
Battery UVLO hysteresis
Ipre-charge is percentile of the external
fast charge settings.
VBAT rising
t_DGL(LOWV)
Deglitch time for pre-charge to fast
charge transition
V_BATSHRT
I_BATSHRT
t_DGL(BATSHRT)
Battery short threshold
Hysteresis for V_BATSHRT
Trickle charge current
(V_BAT < V_BATSHRT)
Deglitch time for trickle charge tp pre-
charge transition
Battery voltage rising
Battery voltage falling
I_TERM
Termination current threshold
Termination current threshold
tolerance
Termination Current on SA only
t_DGL(TERM)
V_RCH
t_DGL(RCH)
Deglitch time for charge termination
Recharge threshold voltage
Deglitch time
Both rising and falling, 2-mV overdrive,
t_RISE, t_FALL = 100 ns
Below V_BATREG
V_BAT falling below V_RCH, t_FALL = 100 ns
MIN
3.5
–0.5%
–0.75%
500
–7%
297
232.5
45
2.9
8
2.37
1.9
25
–10%
70
TYP
MAX UNIT
13
mA
5
170
225
μA
16
22
μA
1
μA
20
30 mΩ
30
40
4.44
V
4.2
0.5%
0.75%
2000 mA
+7%
330
363 mA
250
267.5
AΩ
0.42
55
3
100
10
V
75
Ω
3.1
V
mV
12 % I_CHG
2.5
2.63
V
200
mV
32
ms
2
2.1
V
100
mV
35
50 mA
256
us
10
%ICHG
10%
64
ms
115
160 mV
32
ms
Copyright © 2013, Texas Instruments Incorporated
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