TMS664414 Datasheet, PDF (42/56 Pages) Texas Instruments – 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES

TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
ACTV_3
ACTV_0 WRT-P_3
READ-P_0
CLK
DQ
DQMx
tRRD
tRCD
a
b
c
d
nCWL
e
f
g
RAS
CAS
W
A13
A12
A11
R0
R1
A10
R0
R1
A0 – A9
R0
R1
C0
C1
CS
CKE
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q) (0 –3) ADDR a
b
c
d
e
f
g
h
D
3
R0 C0† C0 + 1 C0 + 2 C0 + 3
Q
0
R1
C1 C1 + 1 C1 + 2 C1 + 3
† _{Column-address sequence depends on programmed burst type and starting addresses C0 and C1 (see Table 5).}
NOTE A: This example illustrates minimum nCWL,tRRD, and tRCD for the ’664xx4 at 125 MHz.
Figure 32. Write-Burst Bank 3, Read-Burst Bank 0 With Automatic Deactivate
(CAS latency = 3, burst length = 4)
42
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