TMS664414 Datasheet, PDF (35/56 Pages) Texas Instruments – 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES

TMS664414, TMS664814, TMS664164
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS695A – APRIL 1998 – REVISED JULY 1998
PARAMETER MEASUREMENT INFORMATION
CLK
DQ
ACTV_3
WRT_3
DEAC_3
tRCD
a
b
c
d
e
f
g
h
nWR
DQMx
RAS
CAS
W
A13
A12
A11
R0
A10
R0
A0 – A9
R0
C0
CS
CKE
BURST
TYPE
BANK
ROW
BURST CYCLE
(D/Q) (0 – 3) ADDR a
b
c
d
e
f
g
h
D
3
R0 C0† C0 + 1 C0 + 2 C0 + 3 C0 + 4 C0 + 5 C0 + 6 C0 + 7
† _{Column-address sequence depends on programmed burst type and starting address C0 (see Table 6).}
NOTE A: This example illustrates minimum tRCD and nWR for the ’664xx4 at 125 MHz.
Figure 26. Write Burst (burst length = 8)
• POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
35