DS16EV5110SQ Datasheet, PDF (4/24 Pages) Texas Instruments – DS16EV5110 Video Equalizer (3D+C) for DVI, HDMI Sink-Side Applications

DS16EV5110
SNLS249M – FEBRUARY 2007 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings⁽¹⁾⁽²⁾
Supply Voltage (V_DD)
LVCMOS Input Voltage
-0.5V to +4.0V
-0.5V + 4.0V
LVCMOS Output Voltage
-0.5V to 4.0V
CML Input/Output Voltage
-0.5V to 4.0V
Junction Temperature
+150°C
Storage Temperature
-65°C to +150°C
Lead Temperature (Soldering, 5 sec.)
+260°C
ESD Rating
HBM, 1.5 kΩ, 100 pF
CML Inputs
>8 kV
>10 kV
Thermal Resistance
θ_JA, No Airflow
30°C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute
Maximum Numbers are ensured for a junction temperature range of –40°C to +125°C. Models are validated to Maximum Operating
Voltages only.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions⁽¹⁾⁽²⁾
Supply Voltage (V_DD to GND)
Ambient Temperature
Min
Typ
Max
Units
3.0
3.3
3.6
V
-40
25
+85
°C
(1) Typical values represent most likely parametric norms at V_DD = 3.3V, T_A = 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless other specified.⁽¹⁾⁽²⁾
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LVCMOS DC SPECIFICATIONS
I_IH-PU
High Level Input Leakage Current LVCMOS pins with internal pull-up
resistors
-10
+10
μA
I_IH-PD
High Level Input Leakage Current LVCMOS pins with internal pull-
down resistors
80
105
μA
I_IL-PU
Low Level Input Leakage Current LVCMOS pins with internal pull-up
resistors
-20
-10
μA
I_IL-PD
Low Level Input Leakage Current LVCMOS pins with internal pull-
down resistors
-10
+10
μA
V_IH
V_IL
V_OH
V_OL
POWER
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
SD Pin, I_OH = -3mA
SD Pin, I_OL = 3mA
2.0
VDD
V
0
0.8
V
2.4
V
0.4
V
PD
Power Dissipation
EN = High, Device Enabled
475
700
mW
EN = Low, Power Down Mode
70
mW
(1) Typical values represent most likely parametric norms at V_DD = 3.3V, T_A = 25°C, and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes.
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