BUF602IDBVTG4 Datasheet, PDF (4/27 Pages) Texas Instruments – High-Speed, Closed-Loop Buffer

BUF602
SBOS339B – OCTOBER 2005 – REVISED MAY 2008 ...................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS: V_S = +5V
Boldface limits are tested at +25°C.
At R_L = 100Ω to V_S/2, unless otherwise noted.
PARAMETER
AC PERFORMANCE
Bandwidth
Full-Power Bandwidth
Bandwidth for 0.1dB Flatness
Slew Rate
Rise Time and Fall Time
Settling Time to 0.05%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
Differential Gain
Differential Phase
BUFFER DC PERFORMANCE⁽⁴⁾
Maximum Gain
Minimum Gain
Input Offset Voltage
Average Input Offset Voltage Drift
Input Bias Current
Average Input Bias Current Drift
BUFFER INPUT
Input Impedance
BUFFER OUTPUT
Most Positive Output Voltage
Least Positive Output Voltage
Output Current (Continuous)
Peak Output Current
Closed-Loop Output Impedance
MID-POINT REFERENCE OUTPUT
Maximum Mid-Supply Reference Voltage
Minimum Mid-Supply Reference Voltage
Mid-Supply Output Current, Sourcing
Mid-Supply Output Current, Sinking
Mid-Supply Output Impedance
CONDITIONS
(See figure 31)
V_O = 500mV_PP
V_O = 1V_PP
V_O = 3V_PP
V_O = 500mV_PP
V_O = 3V Step
V_O = 0.2V Step
V_O = 1V Step
V_O = 2V_PP, 5MHz
R_L = 100Ω
R_L = 500Ω
R_L = 100Ω
R_L = 500Ω
f > 100kHz
f > 100kHz
NTSC, R_L = 100Ω to V_S/2
NTSC, R_L = 100Ω to V_S/2
R_L = 500Ω
R_L = 500Ω
TYP
+25°C
780
700
420
130
2500
450
6
–50
–73
–70
–73
4.9
2.2
0.16
0.05
0.99
0.99
±16
±3
R_L = 100Ω
R_L = 500Ω
R_L = 100Ω
R_L = 500Ω
V_O = 0V
V_O = 0V
f ≤ 10MHz
1.0 || 2.1
+3.9
+4.1
+1.1
+0.9
±60
±160
1.4
2.5
2.5
800
70
200
BUF602ID, IDBV
MIN/MAX OVER TEMPERATURE
+25°C ⁽²⁾
0°C to
70°C ⁽³⁾
–40°C to
+85°C ⁽³⁾
UNITS
400
400
1800
875
1600
875
390
1400
900
MHz
MHz
MHz
MHz
V/µs
ps
ns
–45
–44
–62
–61
–64
–64
–72
–72
5.2
5.7
2.7
2.8
–43
dBc
–60
dBc
–63
dBc
–71
dBc
6.1
nV/√Hz
2.9
pA/√Hz
%
°
1
1
0.98
0.98
±30
±36
±125
±7
±8
±20
1
0.98
±38
±125
±8.5
±20
V/V
V/V
mV
µV/°C
µA
nA/°C
MΩ || pF
+3.7
+3.7
+3.7
V
+3.8
+3.8
+3.8
V
+1.3
+1.3
+1.3
V
+1.2
+1.2
+1.2
V
±50
±49
±48
mA
mA
Ω
2.6
2.6
2.4
2.4
2.6
V
2.4
V
µA
µA
Ω
MIN/
MAX
min
typ
typ
typ
min
max
typ
max
max
max
max
max
max
typ
typ
max
min
max
max
max
max
typ
min
min
max
max
min
typ
typ
max
min
typ
typ
typ
TEST LEVEL⁽¹⁾
B
C
C
C
B
B
C
B
B
B
B
B
B
C
C
A
A
A
B
A
B
C
B
A
B
A
A
C
C
A
A
C
C
C
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +4°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
4
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