BUF602IDBVTG4 Datasheet, PDF (3/27 Pages) Texas Instruments – High-Speed, Closed-Loop Buffer

BUF602
www.ti.com ...................................................................................................................................................... SBOS339B – OCTOBER 2005 – REVISED MAY 2008
ELECTRICAL CHARACTERISTICS: V_S = ±5V
Boldface limits are tested at +25°C.
At R_L = 100Ω, unless otherwise noted.
PARAMETER
AC PERFORMANCE
Bandwidth
Full Power Bandwidth
Bandwidth for 0.1dB Flatness
Slew Rate
Rise Time and Fall Time
Settling Time to 0.05%
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
Input Current Noise
Differential Gain
Differential Phase
BUFFER DC PERFORMANCE⁽⁴⁾
Maximum Gain
Minimum Gain
Input Offset Voltage
Average Input Offset Voltage Drift
Input Bias Current
Average Input Bias Current Drift
BUFFER INPUT
Input Impedance
BUFFER OUTPUT
Output Voltage Swing
Output Current (Continuous)
Peak Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Specified Operating Voltage
Maximum Operating Voltage
Minimum Operating Voltage
Maximum Quiescent Current
Minimum Quiescent Current
Power-Supply Rejection Ratio (+PSRR)
THERMAL CHARACTERISTICS
Specification: ID
Thermal Resistance θ_JA
D
SO-8
DBV SOT23-5
CONDITIONS
(See figure 30)
V_O = 500mV_PP
V_O = 1V_PP
V_O = 5V_PP
V_O = 500mV_PP
V_O = 5V Step
V_O = 0.2V Step
V_O = 1V Step
V_O = 2V_PP, 5MHz
R_L = 100Ω
R_L = 500Ω
R_L = 100Ω
R_L = 500Ω
f > 100kHz
f > 100kHz
NTSC, R_L = 150Ω to 0V
NTSC, R_L = 150Ω to 0V
R_L = 500Ω
R_L = 500Ω
TYP
+25°C
1000
920
880
240
8000
350
6
–57
–76
–68
–98
4.8
2.1
0.15
0.04
0.99
0.99
±16
±3
R_L = 100Ω
R_L = 500Ω
V_O = 0V
V_O = 0V
f ≤ 10MHz
1.0 || 2.1
±3.8
±4.0
±60
±350
1.4
±5
V_S = ±5V
V_S = ±5V
Junction-to-Ambient
Junction-to-Ambient
5.8
5.8
54
–40 to +85
125
150
BUF602ID, IDBV
MIN/MAX OVER TEMPERATURE
+25°C ⁽²⁾
0°C to
70°C ⁽³⁾
–40°C to
+85°C ⁽³⁾
560
550
540
7000
625
6000
640
5000
650
–44
–44
–42
–63
–62
–60
–63
–63
–63
–85
–84
–82
5.1
5.6
6.0
2.6
2.7
2.8
1
1
0.98
0.98
±30
±36
±125
±7
±8
±20
1
0.98
±38
±125
±8.5
±20
±3.7
±3.7
±3.7
±3.8
±3.8
±3.8
±50
±49
±48
±6.3
±6.3
±6.3
±1.4
±1.4
±1.4
6.3
6.9
7.2
5.3
4.9
4.3
48
46
45
UNITS
MHz
MHz
MHz
MHz
V/µs
ps
ns
dBc
dBc
dBc
dBc
nV/√Hz
pA/√Hz
%
°
V/V
V/V
mV
µV/°C
µA
nA/°C
MΩ || pF
V
V
mA
mA
Ω
V
V
V
mA
mA
dB
°C
°C/W
°C/W
MIN/
MAX
min
typ
typ
typ
min
max
typ
max
max
max
max
max
max
typ
typ
max
min
max
max
max
max
typ
min
min
min
typ
typ
typ
max
min
max
min
min
typ
typ
typ
TEST LEVEL⁽¹⁾
B
C
C
C
B
B
C
B
B
B
B
B
B
C
C
A
A
A
B
A
B
C
B
A
A
C
C
C
A
B
A
A
A
C
C
C
(1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization
and simulation. (C) Typical value only for information.
(2) Junction temperature = ambient for +25°C specifications.
(3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +8°C at high temperature limit for over
temperature specifications.
(4) Current is considered positive out of node.
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