BQ4013 Datasheet, PDF (4/14 Pages) Texas Instruments – 128Kx8 Nonvolatile SRAM

bq4013/Y
Recommended DC Operating Conditions (TA = TOPR)
Symbol
Parameter
VCC Supply voltage
VSS
Supply voltage
VIL
Input low voltage
VIH
Input high voltage
Minimum Typical Maximum Unit
4.5
5.0
5.5
V
4.75
5.0
5.5
V
0
0
0
V
-0.3
-
0.8
V
2.2
-
VCC + 0.3
V
Note:
Typical values indicate operation at TA = 25°C.
Notes
bq4013Y
bq4013
DC Electrical Characteristics (TA = TOPR, _VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
ILI
Input leakage current
ILO
Output leakage current
VOH
Output high voltage
VOL
Output low voltage
ISB1
Standby supply current
ISB2
Standby supply current
Minimum
-
-
2.4
-
-
-
ICC
VPFD
VSO
Operating supply current
-
4.55
Power-fail-detect voltage
4.30
Supply switch-over voltage
-
Typical
-
-
-
-
4
2.5
75
4.62
4.37
3
Maximum
±1
±1
-
0.4
7
4
105
4.75
4.50
-
Unit
µA
µA
V
V
mA
mA
mA
V
V
V
Conditions/Notes
VIN = VSS to VCC
CE = VIH or OE = VIH or
WE = VIL
IOH = -1.0 mA
IOL = 2.1 mA
CE = VIH
CE ≥ VCC - 0.2V,
0V ≤ VIN ≤ 0.2V,
or VIN ≥ VCC - 0.2V
Min. cycle, duty = 100%,
CE = VIL, II/O = 0mA
bq4013
bq4013Y
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V.
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)
Symbol
Parameter
Minimum Typical Maximum Unit
Conditions
CI/O
Input/output capacitance
-
CIN
Input capacitance
-
-
10
pF Output voltage = 0V
-
10
pF Input voltage = 0V
Note:
These parameters are sampled and not 100% tested.
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