BQ24150A Datasheet, PDF (4/41 Pages) Texas Instruments – Fully Integrated Switch-Mode One-Cell Li-Ion Charger With Full USB Compliance and USB-OTG Support

bq24150A
bq24151A
SLUS931 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
RECOMMENDED OPERATING CONDITIONS
V_BUS
T_J
Supply voltage, VBUS
Operating junction temperature range
MIN
NOM
4
0
MAX
6 ⁽¹⁾
+125
UNIT
V
°C
(1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOST or SW pins. A tight
layout minimizes switching noise.
ELECTRICAL CHARACTERISTICS
Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), T_J = 0°C to 125°C, T_J = 25°C for
typical values (unless otherwise noted)
INPUT CURRENTS
PARAMETER
I_(VBUS)
VBUS supply current control
I_lkg
Leakage current from battery to VBUS pin
Battery discharge current in High Impedance
mode, (CSIN, CSOUT, AUXPWR, SW pins)
VOLTAGE REGULATION
V_(OREG)
Output charge voltage
Voltage regulation accuracy
TEST CONDITIONS
VBUS > VBUS(min), PWM switching
VBUS > VBUS(min), PWM NOT switching
0°C < T_J < 85°C, VBUS = 5 V, HZ_MODE = 1,
V_(AUXPWR) > V_(LOWV), SCL, SDA, OTG = 0 V or 1.8 V
0°C < T_J < 85°C, VBUS = 5 V, HZ_MODE = 1,
V_(AUXPWR) < V_(LOWV), 32S mode, SCL, SDA, OTG = 0
V or 1.8 V
0°C < T_J < 85°C, V_(AUXPWR) = 4.2 V, High Impedance
mode
0°C < T_J < 85°C, V_(AUXPWR) = 4.2 V, High Impedance
mode, SCL, SDA, OTG = 0 V or 1.8 V
Operating in voltage regulation, programmable
T_A = 25°C
CURRENT REGULATION (FAST CHARGE)
I_O(CHARGE)
Output charge current
Regulation accuracy for charge current across
R_(SNS)
V_(IREG) = I_O(CHARGE) × R_(SNS)
WEAK BATTERY DETECTION
V_(LOWV) ≤ V_(AUXPWR) < V_(OREG),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, Programmable
20 mV ≤ V_(IREG) ≤ 40 mV
40 mV < V_(IREG)
V_(LOWV)
Weak battery voltage threshold
Weak battery voltage accuracy
Programmable
Hysteresis for V_(LOWV)
Deglitch time for weak battery threshold
OTG PIN LOGIC LEVEL
Battery voltage falling
Rising voltage, 2-mV over drive, t_RISE = 100 ns
V_IL
Input low threshold level
V_IH
Input high threshold level
CHARGE TERMINATION DETECTION
I_(TERM)
Termination charge current
Deglitch time for charge termination
Voltage regulation accuracy for termination
current across R_(SNS)
V_{(IREG_TERM)} = I_O(TERM) × R_(SNS)
INPUT POWER SOURCE DETECTION
V_(AUXPWR) > V_(OREG) – V_(RCH),
VBUS > V_(SLP), R_(SNS) = 68 mΩ, Programmable
Both rising and falling, 2-mV overdrive,
t_RISE, t_FALL = 100 ns
3 mV ≤ V_{(IREG_TERM)} < 5 mV
5 mV ≤ V_{(IREG_TERM)} < 20 mV
20 mV ≤ V_{(IREG_TERM)} ≤ 40 mV
Input voltage lower limit
Input power source detection, Input voltage falling
V_IN(min)
t_INT
Deglitch time for VBUS rising above V_IN(min)
Hysteresis for V_IN(min)
Detection Interval
Rising voltage, 2-mV overdrive, t_RISE = 100 ns
Input voltage rising
Input power source detection
MIN
3.5
–0.5%
–1%
550
–5%
–3%
3.4
–5%
1.3
50
–25%
–10%
–5%
3.6
100
TYP MAX UNIT
10
mA
5
20 µA
35 µA
5 µA
20 µA
4.44
V
0.5%
1%
1250 mA
5%
3%
3.7
V
5%
100
mV
30
ms
0.4
V
V
400 ^mA
30
ms
25%
10%
5%
3.8
4
V
30
ms
200 mV
2
S
4
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