BQ4011 Datasheet, PDF (3/13 Pages) Texas Instruments – 32Kx8 Nonvolatile SRAM

bq4011/bq4011Y
Recommended DC Operating Conditions (TA = TOPR)
Symbol
Parameter
Minimum Typical Maximum Unit
Notes
VCC Supply voltage
VSS Supply voltage
VIL Input low voltage
VIH Input high voltage
4.5
5.0
5.5
V bq4011Y/bq4011Y-xxxN
4.75
5.0
5.5
V bq4011
0
0
0
V
-0.3
-
0.8
V
2.2
-
VCC + 0.3
V
Note:
Typical values indicate operation at TA = 25°C.
DC Electrical Characteristics (TA = TOPR, VCCmin ≤ VCC ≤ VCCmax)
Symbol
Parameter
ILI
Input leakage current
ILO
VOH
VOL
ISB1
Output leakage current
Output high voltage
Output low voltage
Standby supply current
ISB2
Standby supply current
Minimum
-
-
2.4
-
-
-
ICC
VPFD
VSO
Operating supply current
-
4.55
Power-fail-detect voltage
4.30
Supply switch-over voltage
-
Typical
-
-
-
-
4
2.5
55
4.62
4.37
3
Maximum
±1
±1
-
0.4
7
4
75
4.75
4.50
-
Unit
µA
µA
V
V
mA
mA
mA
V
V
V
Conditions/Notes
VIN = VSS to VCC
CE = VIH or OE = VIH or
WE = VIL
IOH = -1.0 mA
IOL = 2.1 mA
CE = VIH
CE ≥ VCC - 0.2V,
0V ≤ VIN ≤ 0.2V,
or VIN ≥ VCC - 0.2V
Min. cycle, duty = 100%,
CE = VIL, II/O = 0mA
bq4011
bq4011Y
Note:
Typical values indicate operation at TA = 25°C, VCC = 5V.
Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)
Symbol
Parameter
Minimum Typical
CI/O
Input/output capacitance
-
-
CIN
Input capacitance
-
-
Note:
These parameters are sampled and not 100% tested.
Maximum
10
10
Unit
Conditions
pF Output voltage = 0V
pF Input voltage = 0V
Aug. 1993 C
3