THS4511 Datasheet, PDF (2/25 Pages) Texas Instruments – WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER

THS4511
SLOS471 – SEPTEMBER 2005
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated
circuits be handled with appropriate precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
over operating free-air temperature range (unless otherwise noted)
V_SS
Supply voltage V_S– to V_S+
V_I
Input voltage
V_ID
Differential input voltage
I_O
Output current
Continuous power dissipation
T_J
Maximum junction temperature⁽²⁾
T_J
Maximum junction temperature, continuous operation, long term reliability⁽³⁾
T_A
Operating free-air temperature range
T_stg
Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
HBM
ESD ratings
CDM
MM
UNIT
5.5 V
±V_S
4V
200 mA
See Dissipation Rating Table
150°C
125°C
–40°C to 85°C
–65°C to 150°C
300°C
2000 V
1500 V
100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(3) The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature
may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside
of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so
may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief
SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package.
DISSIPATION RATINGS TABLE PER PACKAGE
PACKAGE ⁽¹⁾
RGT (16)
θ_JC
2.4°C/W
θ_JA
39.5°C/W
POWER RATING
T_A ≤ 25°C
T_A = 85°C
2.3 W
225 mW
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
2