TC213 Datasheet, PDF (2/21 Pages) Texas Instruments – 1024- × 512-pixel ccd image sensor

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR
SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991
description (continued)
Gated floating-diffusion detection structures are used with each serial register to convert charge to signal
voltage. External resets allow the application of off-chip correlated clamp sample-and-hold amplifiers for
low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,
two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per
second when combined off chip. An output of 30 frames per second with one field per frame is typical. At room
temperature, the readout noise is 55 elecrons and a minimum dynamic range of 60 dB is available.
The blooming protection incorporated into the sensor is based on recombining excess charge with charge of
opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the
antiblooming gate, which is an integral part of each image-sensing element. The storage area antiblooming gate
is clocked only for charge transfer in normal use.
The TC213 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking.
The TC213 is characterized for operation from –10°C to 40°C.
functional block diagram
TDB ¹⁹
Top Drain
21
IAG
22
ABGI
23
SAG
24
ABGS
4
ADB
6
RST2
3
OUT2
7
RST1
1
OUT1
Amplifiers
Image Area With
Blooming Protection
24 Dark Reference Elements
Storage Area
Multiplexer, Transfer Gates,
and Serial Registers
16
IAG
15
ABGI
14
SAG
13
ABGS
IDB
12
10
SRG2
9
SRG1
11
TRG
12 Dummy
Elements
2
AMP GND
Clearing Drain
8
CDB
2-2
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