TC215 Datasheet, PDF (13/19 Pages) Texas Instruments – 1024- × 1024-PIXEL CCD IMAGE SENSOR

TC215
1024- × 1024-PIXEL CCD IMAGE SENSOR
SOCS014B – AUGUST 1989 – REVISED DECEMBER 1991
optical characteristics, T_A = 25°C, integration time = 33 ms (unless otherwise noted)
PARAMETER
MIN
TYP
MAX UNIT
Sensitivity (see Note 9)
No IR filter
With IR filter
Measured at VU
(see Note 10)
518
mV/lx
64
Saturation signal, Vsat (see Note 11)
Maximum usable signal, Vuse
Blooming overload ratio (see Note 12)
320
mV
200
mV
100
Image-area well capacity
60 x 103
electrons
Dark current
Dark signal (see Note 13)
TA = 40°C
TA = 21°C
TC215-30
TC215-40
0.027
nA/cm2
5
mV
5
Pixel uniformity
TC215-30
TC215-40
15
mV
20
Column uniformity
TC215-30
TC215-40
1.4
mV
1.4
Shading
VO = 1/2 VU (see Note 10)
15%
NOTES: 9. Sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 K. A CM-500 filter is used. Sensitivity is
measured at any illumination level that gives an output voltage level less than VU.
10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio
is the ratio of blooming exposure to saturation exposure.
13. Dark-signal level is measured from the dark dummy pixels.
timing requirements
tr
Rise time
tf
Fall time
IAG1, IAG2
SRG1, SRG2
RST1, RST2
TRG
ABG1, ABG2
IAG1, IAG2
SRG1, SRG2
RST1, RST2
TRG
ABG1, ABG2
MIN MAX UNIT
200
10
10
ns
200
100
200
10
10
ns
200
100
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