TC215 Datasheet, PDF (1/19 Pages) Texas Instruments – 1024- × 1024-PIXEL CCD IMAGE SENSOR

TC215
1024- × 1024-PIXEL CCD IMAGE SENSOR
• High-Resolution, Solid-State
Frame-Transfer Image Sensor
• 17.2-mm Image-Area Diagonal
• 1000 (H) x 1018 (V) Active Elements in
Image-Sensing Area
• Square Pixels
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 60 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
SOCS014B – AUGUST 1989 – REVISED DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
OUT1 ¹
AMP GND ²
OUT2 ³
ADB ⁴
SUB ⁵
RST2 ⁶
RST1 ⁷
CDB ⁸
SRG1 ⁹
SRG2 ¹⁰
TRG ¹¹
IDB ¹²
24 _ABG2
23 _IAG2
22 _ABG1
21 _IAG1
20 _SUB
19 _TDB
18 _SUB
17 _SUB
16 _IAG1
15 _ABG1
14 _IAG2
13 _ABG2
description
The TC215 is a full-frame charge-coupled-device (CCD) image sensor that provides very high-resolution image
acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. The
image format measures 12 mm horizontally by 12.216 mm vertically; the image-area diagonal is 17.2 mm. The
image-area pixels are 12-µm square. The image area contains 1018 active lines with 1000 active pixels per line.
Six additional dark reference lines give a total of 1024 lines in the image area, and 24 additional dark reference
pixels per line give a total of 1024 pixels per horizontal line.
The full-frame image sensor should be used with a shutter or with strobed illumination to prevent smearing of
the image during readout. To prepare the imaging area for image capture, the photoelectric charge that has
accumulated in the image pixels can be transferred into the clearing drain in one millisecond. After image
capture (integration time), the readout is accomplished by transferring the charge, one line at a time, into two
serial registers, each of which contains 512 data elements and 12 dummy elements. The typical serial-register
clocking rate is 10 megapixels per second. Operating the TC215 at the typical data rate of one field per frame
generates video output at a continuous 15 frames per second.
Gated floating-diffusion detection structures are used with each serial register to convert charge to signal
voltage. External reset allows the application of off-chip correlated clamp sample-and-hold amplifiers for
low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,
two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per
second when combined off chip. At room temperature, the readout noise is 55 electrons and a minimum dynamic
range of 60 dB is available.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1991, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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