TC277 Datasheet, PDF (12/19 Pages) Texas Instruments – 735- × 580-PIXEL CCD IMAGE SENSOR

TC277
735- × 580-PIXEL CCD IMAGE SENSOR
SOCS020B – DECEMBER 1991
optical characteristics, T_A = 40°C (unless otherwise noted)
PARAMETER
MIN
TYP MAX UNIT
Sensitivity
No IR filter
With IR filter
Measured at VU
(see Notes 10 and 11)
242
mV/lx
30
Saturation signal, Vsat
(see Note 12)
Antiblooming disabled, interlace off
320
mV
Maximum usable signal, Vuse Antiblooming enabled, interlace on
Blooming-overload ratio (see Note 13)
Interlace on
Interlace off
Image-area well capacity
200
150
300
80 x 103
mV
electrons
Smear (see Note 14)
Dark current
Dark signal (see Note 16)
Interlace off
See Note 15
TA = 21°C
TC277-30
TC277-40
0.027
0.0004
6.6
7.2
nA/cm2
mV
Pixel uniformity
Output signal = 50 mV ±10 mV
TC277-30
TC277-40
3.5
mV
5
Column uniformity
Output signal = 50 mV ±10 mV
TC277-30
TC277-40
0.5
mV
0.7
Shading
Output signal = 100 mV
15%
NOTES: 10. Sensitivity is measured at an integration time of 20.03 ms with a source temperature of 2856 K. A CM-500 filter is used.
11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image-area vertical height with recommended clock frequencies.
15. Exposure time is 20 ms and the fast-dump clocking rate during vertical timing is 3.34 MHz.
16. Dark-signal level is measured from the dummy pixels.
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