TC277 Datasheet, PDF (1/19 Pages) Texas Instruments – 735- × 580-PIXEL CCD IMAGE SENSOR

TC277
735- × 580-PIXEL CCD IMAGE SENSOR
• High-Resolution, Solid-State Image Sensor
for PAL B/W TV Applications
• 8-mm Image-Area Diagonal, Compatible
With 1/2” Vidicon Optics
• 699 (H) x 288 (V) Active Elements in
Image-Sensing Area
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 70 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
SOCS020B – DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB 1
IAG 2
ABG 3
TDB 4
OUT3 5
OUT2 6
OUT1 7
AMP GND 8
ADB 9
SUB 10
20 SUB
19 IAG
18 ABG
17 SAG
16 IDB
15 SRG3
14 SRG2
13 SRG1
12 TRG
11 CDB
description
The TC277 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
PAL TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC277 is configured into 288 lines with 699 elements in each line. Thirty-three
elements are provided in each line for dark reference. The blooming-protection feature incorporated into the
sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This
antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each
image-sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge-integration period in alternate fields, and effectively increasing
the vertical resolution and minimizing aliasing. The device can also be run as a 732 (H) by 288 (V) noninterlaced
sensor with significant reduction in the dark signal. The image is read out through three outputs, each of which
reads out every third column.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC277 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC277 is
characterized for operation from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1991, Texas Instruments Incorporated
• POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1