BQ25120_15 Datasheet, PDF (11/68 Pages) Texas Instruments – bq25120 700-nA Low IQ Highly Integrated Battery Charge Management Solution for Wearables and IoT

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BQ25120
SLUSBZ9A – AUGUST 2015 – REVISED AUGUST 2015
Electrical Characteristics (continued)
Circuit of , V_(UVLO) < V_IN < V_(OCP) and V_IN > V_(BAT) + V_(SLP), T_J = -40 to 85°C and T_J = 25°C for typical values (unless otherwise
noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V_{IN(BAT_DELTA)}
Input voltage above VBAT
where PG sends two 128 µs
pulses each minute to signal
the host of the input voltage
status
V_UVLO < V_IN < V_OVP
0.825
1
1.15
V
INPUT PIN (CD LSCTRL)
V_{IL(/CD_LSCTRL)}
V_{IH(/CD_LSCTRL)}
R_PULLDOWN/CD
R_(LSCTRL)
Input low threshold
Input high threshold
Internal pull-down resistance
Internal pull-down resistance
V_(PULLUP) = 1V
V_(PULLUP) = 1V
0.25
V
0.75
V
900
kΩ
2
MΩ
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