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| BQ25120_15 Datasheet, PDF (10/68 Pages) Texas Instruments – bq25120 700-nA Low IQ Highly Integrated Battery Charge Management Solution for Wearables and IoT | |||
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BQ25120
SLUSBZ9A â AUGUST 2015 â REVISED AUGUST 2015
www.ti.com
Electrical Characteristics (continued)
Circuit of , V(UVLO) < VIN < V(OCP) and VIN > V(BAT) + V(SLP), TJ = -40 to 85°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IIN(LDO)
Quiescent current for VINLS
in LDO mode
OFF-state supply current
0.9
µA
0.25
µA
VIH(LSCTRL)
High-level input voltage for
LSCTRL
1.15 V > V(VINLS) > 6.6 V
0.75 x V(SYS)
6.6
V
VIL(LSCTRL)
Low-level input voltage for
LSCTRL
1.15 V > V(VINLS) > 6.6 V
0.25 x V(SYS)
V
PUSHBUTTON TIMER (MR)
VIL
Low-level input voltage
RPU
Internal pull-up resistance
VBAT MONITOR
0.3
V
120
kΩ
VBMON
Battery Voltage Monitor
Accuracy
V(BAT) Falling - Including 2% increment
-3.5
3.5
%V(BATREG)
BATTERY-PACK NTC MONITOR
VHOT
High temperature threshold
VWARM
Warm temperature threshold
VCOOL
Cool temperature threshold
VCOLD
Low temperature threshold
TSOFF
TS Disable threshold
PROTECTION
VTS falling, 1% VIN Hysteresis
VTS falling, 1% VIN Hysteresis
VTS rising, 1% VIN Hysteresis
VTS rising, 1% VIN Hysteresis
VTS rising, 2% VIN Hysteresis
14.5
20.1
35.4
39.3
55
15
20.5
36
39.8
15.2
20.8
36.4
40.2
60
%VIN
%VIN
%VIN
%VIN
%VIN
V(UVLO)
VUVLO(HYS)
V(BUVLO)
IC active threshold voltage
IC active hysteresis
Battery Undervoltage Lockout
threshold Range
Default Battery Undervoltage
Lockout Accuracy
VIN rising
VIN falling from above VUVLO
Programmable Range for V(BUVLO) VBAT
falling, 200 mV Hysteresis
V(BAT) falling
3.4
3.6
3.8
V
150
mV
2.2
3.0
V
-2.5%
2.5%
V(BATSHORT)
V(BATSHORT_HY
S)
I(BATSHORT)
Battery short circuit threshold
Hysteresis for V(BATSHORT)
Battery short circuit charge
current
Battery voltage falling
2
V
100
mV
I(PRETERM)
mA
V(SLP)
V(SLP_HYS)
VOVP
Sleep entry threshold, VIN -
V(BAT)
Sleep-mode exit hysteresis
Maximum Input Supply OVP
threshold voltage
2 V < VBAT < V(BATREG), VIN falling
VIN rising above V(SLP)
VIN rising, 100 mV hysteresis
65
120
mV
40
65
100
mV
5.35
5.55
5.75
V
tDGL_OVP
TSHTDWN
THYS
tDGL_SHTDWN
Deglitch time, VIN OVP falling
Thermal trip
Thermal hysteresis
Deglitch time, Thermal
shutdown
VIN falling below VOVP, 1V/us
VIN > VUVLO
VIN > VUVLO
TJ rising above TSHTDWN
32
ms
114
°C
11
°C
4
µs
I2C INTERFACE
I2C Bus Specification
standard and fast mode
frequency support
100
400
kHz
VIL
Input low threshold level
VIH
Input high threshold level
VIH
Input high threshold level
VOL
Output low threshold level
IBIAS
High-Level leakage current
INT, PG, and RESET OUTPUT (Open Drain)
VPULLUP = 1.1 V, SDA and SCL
VPULLUP = 1.1 V, SDA and SCL
VPULLUP = 3.3 V, SDA and SCL
IL = 5mA, sink current, VPULLUP = 1.1 V
VPULLUP = 1.8V, SDA and SCL
0.825
2.475
0.275
V
V
V
0.275
V
1
µA
VOL
Low level output threshold
Sinking current = 5 mA
IIN
Bias current into pin
Pin is high impedance, IOUT = 0 mA
0.25 x V(SYS)
V
0
12
nA
10
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Product Folder Links: BQ25120
Copyright © 2015, Texas Instruments Incorporated
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