TL081 Datasheet, PDF (10/29 Pages) STMicroelectronics – GENERAL PURPOSE J-FET SINGLE OPERATIONAL AMPLIFIER

TL081, TL081A, TL081B, TL082, TL082A, TL082B
TL082Y, TL084, TL084A, TL084B, TL084Y
JFET-INPUT OPERATIONAL AMPLIFIERS
SLOS081E – FEBRUARY 1977 – REVISED FEBRUARY 1999
electrical characteristics, V_CC± = ±15 V, T_A = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS†
TL082Y, TL084Y
UNIT
MIN TYP MAX
VIO
α _VIO
IIO
IIB
VICR
Input offset voltage
Temperature coefficient of input offset voltage
Input offset current‡
Input bias current‡
Common-mode input voltage range
VO = 0,
VO = 0,
VO = 0,
VO = 0,
RS = 50 Ω
RS = 50 Ω
3
15 mV
18
µV/°C
5 200 pA
30 400 pA
– 12
± 11
to
V
15
VOM
AVD
B1
ri
Maximum peak output voltage swing
Large-signal differential voltage amplification
Unity-gain bandwidth
Input resistance
RL = 10 kΩ,
VO = ± 10 V,
RL ≥ 2 kΩ
± 12 ± 13.5
25 200
3
1012
V
V/mV
MHz
Ω
CMRR Common-mode rejection ratio
VIC = VICRmin, VO = 0,
70
86
dB
RS = 50 Ω
70
86
kSVR
Supply voltage rejection ratio (∆VCC_± /∆VIO)
VCC = ± 15 V to ± 9 V,
70
86
VO = 0,
RS = 50 Ω
70
86
dB
ICC
Supply current (per amplifier)
VO = 0,
No load
1.4 2.8 mA
VO1/ VO2 Crosstalk attenuation
AVD = 100
120
dB
† _{All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified.}
‡ _{Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive as shown in}
Figure 17. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as possible.
operating characteristics, V_CC± = ±15 V, T_A = 25°C
PARAMETER
TEST CONDITIONS
SR Slew rate at unity gain
tr
Rise time
Overshoot factor
VI = 10 V,
VI = 20 mV,
RL = 2 kΩ, CL = 100 pF,
RL = 2 kΩ, CL = 100 pF,
Vn Equivalent input noise voltage RS = 20 Ω
f = 1 kHz
f = 10 Hz to 10 kHz
In
Equivalent input noise current
THD Total harmonic distortion
RS = 20 Ω,
VIrms = 6 V,
f = 1 kHz
f = 1 kHz
AVD = 1,
RS ≤ 1 kΩ,
See Figure 1
See Figure 1
RL ≥ 2 kΩ,
MIN TYP MAX UNIT
8
13
V/ µs
0.05
µs
20%
18
nV/√Hz
4
µV
0.01
pA/√Hz
0.003%
10
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