IRF840PBF Datasheet, PDF (4/6 Pages) International Rectifier – HEXFET POWER MOSFET

IRF840PBF
®
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
Fig 8. On-Resistance Variation
3.0
2.5
1.1
2.0
1.0
1.5
0.9
0.8
-100
*. Notes :
1. V = 0 V
GS
2. I = 250uA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
1.0
0.5
0.0
-100
*. Notes :
1. V = 10 V
GS
2. I = 4.4 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig 9. Maximum Safe Operating Area
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R
DS(on)
100 μs
1 ms
10 ms
DC
*. Notes :
1. T = 25 ^oC
C
2. T = 150 oC
J
3. Single Pulse
10¹
10²
10³
V , Drain-Source Voltage [V]
DS
Fig 10. Maximum Drain Current
vs. Case Temperature
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T Case Temperature [oC]
C'
Fig 11. Transient Thermal Response Curve
10⁰
D =0.5
0 .2
1 0 ^-1
0.1
0.05
0 .0 2
0.01
single pulse
*. N otes :
1. Z (t) = 0.91OC /W M ax.
?JC
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM
C
DM
?JC
t
1
t
2
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t , S quare W ave P ulse D uration [sec]
1
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 4/6
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