IRF840PBF Datasheet, PDF (3/6 Pages) International Rectifier – HEXFET POWER MOSFET

IRF840PBF
®
Fig 1. On-State Characteristics
Top : 15V
10V
9V
8V
6V
Bottom : 5.5V
10¹
10⁰
10⁰
*. Notes :
1. 250us Pulse Test
2. T = 25^OC
C
10¹
V , Drain-Source Voltage [V]
DS
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
V = 20V
1.4
GS
V = 10V
GS
1.2
1.0
0.8
0.6
0.4
0
*. Note : T = 25OC
J
5
10
15
20
25
30
I , Drain Current [A]
D
Fig 5. Capacitance Characteristics
3000
2500
2000
1500
C
iss
1000
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
*. Notes :
1. V = 0V
GS
2. f=1MHz
500
0
0
C
oss
C
rss
5
10 15 20 25 30 35 40 45 50
V , Drain-Source Voltage [V]
DS
Fig 2. Transfer Characteristics
10¹
25^oC
150^oC
10⁰
-55^oC
*. Notes :
1. V = 50V
DS
2. 250us Pulse Test
10^-1
2
3
4
5
6
7
8
9
10
V , Gate-Source Voltage [V]
GS
Fig 4. On State Current vs.
Allowable Case Temperature
10¹
10⁰
10^-1
0.2
150^OC 25^OC
*. Notes :
1. V = 0V
GS
2. 250us Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Fig 6. Gate Charge Characteristics
12
10
V = 400V
DS
V = 250V
DS
8
6
4
2
*. Note : I = 8.8 A
D
0
0
10
20
30
40
Q , Total Gate Charge [nC]
G
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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