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IRF840PBF Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET POWER MOSFET
◁
IRF840PBF
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
500
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
ID = 250uA, referenced to 25 °C
-
VDS = 500V, VGS = 0V
-
IDSS Drain-Source Leakage Current
VDS = 400V, TC = 125 °C
-
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
IGSS
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 4.4A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
Crss Reverse Transfer Capacitance
-
Dynamic Characteristics
td(on)
tr
Turn-on Delay Time
Rise Time
-
VDD =250V, ID =8.8A, RG =50Ω
-
td(off)
tf
Turn-off Delay Time
Fall Time
※ see fig. 13.
-
(Note 4, 5)
-
Qg
Total Gate Charge
-
Qgs
Gate-Source Charge
VDS =400V, VGS =10V, ID =8.8A
-
※ see fig. 12.
(Note 4, 5)
Qgd
Gate-Drain Charge(Miller Charge)
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =8.8A, VGS =0V
IS=8.8A, VGS=0V, dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 13mH, IAS =8.8A, VDD = 50V, RG = 50Ω , Starting TJ = 25°C
3. ISD ≤ 8.8A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ Max Units
-
-
V
0.48
-
V/°C
-
1
uA
-
10
uA
-
100
nA
-
-100
nA
-
4.0
V
0.65 0.85
Ω
1173
-
122
-
pF
31
-
12
34
25
60
ns
45
100
18
46
35
46
6
-
nC
14
-
Typ.
-
-
-
330
3.3
Max.
8.8
35.2
1.5
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/
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