IRF840PBF Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET POWER MOSFET

IRF840PBF
®
IRF840PBF
Pb
Pb Free Plating Product
8.8A,500V Heatsink N-Channel Type Power MOSFET
Features
■ R_DS(on) (Max 0.85 Ω )@V_GS=10V
■ Gate Charge (Typical 35nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
BV_DSS = 500V
R_DS(ON) = 0.85 ohm
I_D = 8.8A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220C pkg is well suited for
adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current(@T_C = 25°C)
Continuous Drain Current(@T_C = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8.8
5.5
35.2
±30
559
13.7
5
137
1.1
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
0.91
-
62
23
1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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