SI7224DN Datasheet, PDF (9/18 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

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CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
0.05
Si7224DN
Vishay Siliconix
I_D = 7.4 A
T_J = 150 °C
0.04
10
0.03
T_J = 25 °C
0.02
125 °C
25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.6
2.4
I_D = 250 µA
2.2
2.0
1.8
1.6
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.01
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100 µs
Document Number: 69500
S-81549-Rev. B, 07-Jul-08
1 ms
1
0.1
T_A = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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