SI7224DN Datasheet, PDF (5/18 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

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CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
I_D = 6.5 A
0.08
Si7224DN
Vishay Siliconix
T_J = 150 °C
10
0.06
T_J = 25 °C
0.04
125 °C
25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0.02
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
2.0
25
I_D = 250 µA
1.8
20
1.6
15
1.4
10
1.2
5
1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01 0.1
1
10
100
Time (s)
Single Pulse Power
1000
100 µs
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69500
S-81549-Rev. B, 07-Jul-08
www.vishay.com
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