SI7224DN Datasheet, PDF (2/18 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7224DN
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
ΔV_DS/T_J
I_D = 250 µA
V_GS(th) Temperature Coefficient
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_GS(th)
I_GSS
I_DSS
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 16 V
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I_D(on)
R_DS(on)
g_fs
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.5 A
V_GS = 10 V, I_D = 7.4 A
V_GS = 4.5 V, I_D = 5.9 A
V_GS = 4.5 V, I_D = 6.6 A
V_DS = 15 V, I_D = 6.5 A
V_DS = 15 V, I_D = 7.4 A
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Channel 1
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Channel 2
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 6.5 A
V_DS = 10 V, V_GS = 10 V, I_D = 7.4 A
Channel 1
V_DS = 10 V, V_GS = 4.5 V, I_D = 6.5 A
Channel 2
V_DS = 10 V, V_GS = 4.5 V, I_D = 7.4 A
Gate Resistance
R_g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
f = 1 MHz
Min. Typ. Max. Unit
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
30
V
30
37
32
mV/°C
-5
-6
1
2.2
V
1.5
3
± 100
nA
± 100
1
1
µA
10
10
15
A
15
0.027 0.035
0.022 0.028
Ω
0.032 0.042
0.029 0.035
22
S
21
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
570
720
80
pF
115
35
50
9.5 14.5
12
18
4.5
7
5.5
8.5
nC
1.5
2.5
1.2
1.7
3.3
Ω
2.7
www.vishay.com
2
Document Number: 69500
S-81549-Rev. B, 07-Jul-08