SIA922EDJ Datasheet, PDF (5/9 Pages) Vishay Telefunken – Dual N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
100 us
1
1 ms
0.1
T_A = 25 °C
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
SiA922EDJ
Vishay Siliconix
10
8
8
6
6
Package Limited
4
4
2
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Current Derating*
Power Derating






* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2266-Rev. B, 04-Nov-13
5
Document Number: 62818
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000