SIA922EDJ Datasheet, PDF (3/9 Pages) Vishay Telefunken – Dual N-Channel 30 V (D-S) MOSFET

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SiA922EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.500
1.200
0.900
0.600
T_J = 25 °C
0.300
0.000
0
3
6
9
12
15
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-2
10^-3
10^-4
10^-5
T_J = 150 °C
10^-6
10^-7
T_J = 25 °C
10^-8
10^-9
10^-10
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
V_GS = 5 V thru 3 V
12
V_GS = 2.5 V
9
V_GS = 2 V
6
3
0
0.0
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
5
4
3
2
1
0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.160
450
400
0.120
350
300
C_iss
0.080
0.040
V_GS = 2.5 V
V_GS = 3 V
V_GS = 4.5 V
250
200
150
100
C_rss
50
C_oss
0.000
0
3
6
9
12
15
I_D - Drain Current (A)
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-2266-Rev. B, 04-Nov-13
3
Document Number: 62818
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