SIA922EDJ Datasheet, PDF (4/9 Pages) Vishay Telefunken – Dual N-Channel 30 V (D-S) MOSFET

www.vishay.com
SiA922EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.8
I_D = 4 A
V_DS = 7.5 V
1.6
8
1.4
6
V_DS = 15 V
1.2
4
V_DS = 24 V
1.0
2
0.8
V_GS = 10 V, 4.5 V, I_D = 3.2 A
V_GS = 2.5 V, I_D = 1 A
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
10
T_J = 150 °C
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.160
0.140
0.120
I_D = 3 A
0.100
0.080
T_J = 125 °C
0.060
0.040
T_J = 25 °C
0.020
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.2
20
1.1
15
1.0
0.9
10
0.8
I_D = 250 μA
0.7
5
0.6
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
0
0.001 0.01
0.1
1
10
Pulse (s)
100 1000
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
S13-2266-Rev. B, 04-Nov-13
4
Document Number: 62818
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000