SIA466EDJ Datasheet, PDF (5/9 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA466EDJ
Vishay Siliconix
100
Limited by R *
DS(on)
10
Limited by I_DM
100 μs
1 ms
1
10 ms
100 ms
10s, 1 s
0.1
DC,
T_A = 25 °C
0.01
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
40
30
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
24
2.0
18
1.5
12
1.0
6
0.5
0
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P_D is based on T_{J (max.)} = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1065-Rev. A, 19-May-14
5
Document Number: 62955
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000