SIA466EDJ Datasheet, PDF (3/9 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

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SiA466EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.010
10^-1
T_J = 25 °C
10^-2
0.008
10^-3
0.006
10^-4
10^-5
0.004
10^-6
10^-7
0.002
10^-8
0.000
0
6
12
18
24
V_GS - Gate-Source Voltage (V)
Gate Source Voltage vs. Gate Current
10^-9
0
T_J = 150 °C
T_J = 25 °C
5
10
15
20
25
V_GS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
50
V_GS = 10 V thru 4 V
40
V_GS = 3 V
30
5
4
T_C = 25 °C
3
20
10
0
0
0.015
V_GS = 2 V
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
1
0
0
850
T_C = 125 °C
T_C = - 55 °C
0.6
1.2
1.8
2.4
3
V_GS - Gate- to - Source Voltage (V)
Transfer Characteristics
0.013
0.011
0.009
0.007
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
680
510
340
C_rss
170
C_iss
C_oss
0.005
0
10
20
30
40
50
I_D - Drain Current (A)
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S14-1065-Rev. A, 19-May-14
3
Document Number: 62955
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000