SIA466EDJ Datasheet, PDF (4/9 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I_D = 15 A
V_DS = 5 V
1.65
8
V_DS = 10 V
6
1.4
1.15
4
V_DS = 16 V
0.9
2
SiA466EDJ
Vishay Siliconix
V_GS = 10 V/9 A; 6 V/5 A; 4.5 V/5 A
0
0
100
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
T_J = 25 °C
1
0.65
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.025
0.020
I_D =9 A
0.015
0.010
0.005
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.75
30
I_D = 250 μA
25
1.5
20
1.25
15
10
1
5
0.75
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
S14-1065-Rev. A, 19-May-14
4
Document Number: 62955
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000