SI7456DDP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

New Product
Si7456DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
10
0.12
T_J = 150 °C
1
T_J = 25 °C
0.09
I_D = 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.06
T_J = 125 °C
0.03
T_J = 25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
- 0.1
- 0.4
- 0.7
120
I_D = 5 mA
80
I_D = 250 μA
40
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10
I_D Limited
1 ms
1
Limited by R_DS(on)*
10 ms
100 ms
0.1
1s
T_A = 25 °C
Single Pulse
0.01
BVDSS Limited
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
10 s
DC
100
Safe Operating Area, Junction-to-Ambient
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Document Number: 67869
4
S12-1261-Rev. A, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000